Method for fabricating X-ray masks

Details Method for fabricating X-ray masks Method for fabricating X-ray masks

1989-06-16

1990-06-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

430 5, 156654, 156655, 20419232, 148DIG135, H01L 2130

Patent

active

049328727

ABSTRACT:
In the disclosed method, an X-ray mask is made by forming a semiconductor wafer having a first coefficient of expansion, doping a surface of the wafer, metallizing the wafer, metallizing a washer shaped ring having a lower coefficient of expansion, bonding the ring to the doped surface at the periphery of the wafer at or above room temperature, and processing the wafer by removing the undoped substrate and depositing metallic material on the wafer.

REFERENCES:
patent: 4454209 (1984-06-01), Blair
patent: 4587184 (1986-05-01), Schneider-Gmelch et al.
patent: 4634643 (1987-01-01), Suzuki
patent: 4668336 (1987-05-01), Shimkunas
patent: 4680243 (1987-07-01), Shimkunas et al.
patent: 4719161 (1988-01-01), Kimura et al.
patent: 4837123 (1989-06-01), Kato et al.

Affiliated with

Also associated with

Rating

Method for fabricating X-ray masks does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating X-ray masks, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating X-ray masks will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-614090