Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-01-04
1998-08-11
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438634, 438637, 438638, 438668, 438666, 438740, H01L 214763
Patent
active
057927049
ABSTRACT:
A method for fabricating wiring in a semiconductor device in which a conductor line and a contact hole are formed by self-alignment, includes the steps of: forming an insulating layer on a substrate; forming an etch-step layer on the insulating layer; etching the etch-stop layer of a wiring region connected to a window and the insulating layer to a predetermined thickness; forming a mask layer on the etch-stop layer and the insulating layer; etching the mask layer to remove the mask layer at the central part of the window; and etching the insulating layer of the central part of the window so as to form a contact hole. By applying such a method, a highly improved reliability can be obtained, and a process thereof is simplified by a single photolithography. Also, the contact hole is formed by self-alignment in the lengthwise direction and in the vertical direction of the conductor line.
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Jun Young Kwon
Kim Yong Kwon
Park Jin-Won
Park Nae-Hak
Bowers Jr. Charles L.
Gurley Lynne A.
LG Semicon Co. Ltd.
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