Method for fabricating via holes in a semiconductor wafer

Details Method for fabricating via holes in a semiconductor wafer Method for fabricating via holes in a semiconductor wafer

1981-11-12

1982-09-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156150, 1562728, 156344, 156656, 204 24, C23F 100

Patent

active

043482538

ABSTRACT:
A circuit pattern is formed on a front side surface of a semiconductor wafer and an apertured photoresist pattern is formed over the circuit pattern. Via holes are then formed by laser irradiating the wafer at sites corresponding to the photoresist apertures. The back side surface of the wafer is next metallized and this surface is adhered to a plating block by means of an adhesive layer. Electrical connection between the substrate and plating block is then made, the via holes are electroplated, and the substrate is separated from the plating block and adhesive layer.

REFERENCES:
patent: 3323198 (1967-06-01), Shortes
patent: 3562009 (1971-02-01), Cranston et al.
patent: 3956052 (1976-05-01), Koste et al.
patent: 3986196 (1976-10-01), Decker et al.
patent: 4135988 (1979-01-01), Dugan et al.
patent: 4211603 (1980-07-01), Reed

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