Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-11-24
2010-02-16
Bryant, Kiesha R (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S792000, C438S793000, C438S794000, C257SE21241, C257SE21300, C257SE21302
Reexamination Certificate
active
07662730
ABSTRACT:
A method for fabricating an ultra-high tensile-stressed nitride film is disclosed. A PECVD process is first performed to deposit a transitional silicon nitride film over a substrate. The transitional silicon nitride film has a first concentration of hydrogen atoms. The transitional silicon nitride film is subjected to UV curing process for reducing the first concentration of hydrogen atoms to a second concentration of hydrogen atoms.
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Chen Neng-Kuo
Chen Tsai-Fu
Huang Chien-Chung
Hung Wen-Han
Tsai Teng-Chun
Bryant Kiesha R
Hsu Winston
United Microelectronics Corp.
Yang Minchul
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