Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-14
2010-02-02
Rose, Kiesha L. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S066000, C257S288000, C257S327000, C257SE23132, C257SE29242, C257SE29255
Reexamination Certificate
active
07655987
ABSTRACT:
A metal-oxide-semiconductor (MOS) transistor device is disclosed. The MOS transistor device comprises a semiconductor substrate; a gate structure on the semiconductor substrate; source/drain regions on the semiconductor substrate adjacent to the gate structure; an ultra-high tensile-stressed nitride film having a hydrogen concentration of less than 1E22 atoms/cm3covering the gate structure and the source/drain regions; and an inter-layer dielectric (ILD) film over the ultra-high tensile-stressed nitride film.
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Chen Neng-Kuo
Chen Tsai-Fu
Huang Chien-Chung
Hung Wen-Han
Tsai Teng-Chun
Hsu Winston
Rose Kiesha L.
United Microelectronics Corp.
Yang Minchul
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