Method for fabricating tungsten plug

Details Method for fabricating tungsten plug Method for fabricating tungsten plug

1993-12-10

1997-08-26

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

257763, 438656, 438628, H01L 21283

Patent

active

056610807

ABSTRACT:
A method for fabricating a tungsten plug in a contact hole by depositing a tungsten film of a predetermined thickness several times to form a multilayer structure, thereby increasing the density of the tungsten plug. The method includes the steps of forming an insulating film over a conductive layer, removing a predetermined portion of the insulating film and thereby forming a contact hole through which the conductive layer is partially exposed, forming a glue layer over the entire exposed surface of the resulting structure including the contact hole and the exposed surface of the insulating film, depositing a blanket tungsten film to a small thickness over the glue layer, depositing a seed layer to a small thickness over the blanket tungsten film, sequentially depositing another blanket tungsten film and another seed layer over the seed layer and repeating the sequential deposition until the resulting structure fills the contact hole completely, and etching back the blanket tungsten films and seed layers disposed over the insulating film so that they remain only in the contact hole.

REFERENCES:
patent: 5407698 (1995-04-01), Emesh
patent: 5420074 (1995-05-01), Ohshima
patent: 5489552 (1996-02-01), Merchant et al.
patent: 5573978 (1996-11-01), Cho

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