Method for fabricating trench isolation

Details Method for fabricating trench isolation Method for fabricating trench isolation

2006-06-20

2006-06-20

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S424000, C438S425000, C438S477000

Reexamination Certificate

active

07064072

ABSTRACT:
A semiconductor substrate having a front surface and a backside is prepared. A first silicon oxide layer is formed on the front surface of the semiconductor substrate and, simultaneously, forming a second silicon oxide layer on the backside of the semiconductor substrate. A first silicon nitride layer is formed on the front surface of the semiconductor substrate and, simultaneously, forming a second silicon nitride layer on the backside of the semiconductor substrate. Lithographic and etching process is performed, using the first silicon nitride layer as an etching hard mask, to etch a trench into the front surface of the semiconductor substrate. The trench is then filled with insulating material. Using the insulating material as an etching hard mask, the second silicon nitride layer on the backside of the semiconductor substrate is etched away. A densification process is then performed to densify the insulating material.

REFERENCES:
patent: 5981353 (1999-11-01), Tsai
patent: 6573152 (2003-06-01), Fazio et al.

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