Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2007-09-25
2007-09-25
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C257S301000, C438S391000
Reexamination Certificate
active
10901406
ABSTRACT:
Fabricating a trench capacitor with an insulation collar in a substrate, which is electrically connected thereto on one side through a buried contact, in particular, for a semiconductor memory cell with a planar selection transistor in the substrate and connected through the buried contact, includes providing a trench using an opening in a hard mask, providing a capacitor dielectric in lower and central trench regions, the collar in central and upper trench regions, and a conductive filling at least as far as the insulation collar topside, completely filling the trench with a filling material, carrying out STI trench fabrication process, removing the filling material and sinking the filling to below the collar topside, forming an insulation region on one side above the collar; uncovering a connection region on a different side above the collar, and forming the buried contact by depositing and etching back a metallic filling.
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Kudelka Stephan
Popp Martin
Sänger Annette
Seidl Harald
Jr. Carl Whitehead
Rodgers Colleen E.
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