Method for fabricating transistor having fully silicided gate

Details Method for fabricating transistor having fully silicided gate Method for fabricating transistor having fully silicided gate

2005-06-07

2005-06-07

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S682000

Reexamination Certificate

active

06902994

ABSTRACT:
A method for fabricating a transistor having a fully silicided gate is described. A silicon substrate with a semi-finished transistor formed thereon is provided, wherein the transistor comprises a gate dielectric film, a silicon gate, a cap layer on the silicon gate, a spacer and a source/drain region. A raised source/drain is formed on the source/drain region, and then the cap layer is removed. Subsequently, a full silicidation process is performed to fully silicide the silicon gate.

REFERENCES:
patent: 6853020 (2005-02-01), Yu et al.

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