Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Plural fluid growth steps with intervening diverse operation
Patent
1997-05-14
1999-03-30
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Plural fluid growth steps with intervening diverse operation
438962, 117 89, H01L 2120
Patent
active
058888853
ABSTRACT:
In accordance with the invention, a uniformly spaced three-dimensional array of quantum dots is fabricated by forming a uniform grid of intersecting dislocation lines, nucleating a regular two-dimensional array of quantum dots on the intersections, and replicating the array on successively grown layers. The substrate is partitioned into a grid of in-plane lattice parameters, thereby providing a regular array of preferential nucleation sites for the influx atoms of a different size during the epitaxial process. The regularity of the array results in an equal partition of the incoming atoms which, in turn, leads to uniformly sized islands nucleating on these preferred sites. The result is a uniformly sized, regularly distributed two-dimensional array of quantum dots which can be replicated in succeeding layers.
REFERENCES:
patent: 5614435 (1997-03-01), Petroff et al.
Bowers Charles
Christianson Keith
Lucent Technologies - Inc.
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