Method for fabricating thin film transistors

Details Method for fabricating thin film transistors Method for fabricating thin film transistors

1997-02-05

1998-06-09

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438151, 438159, 438163, 438164, H01L 2100

Patent

active

057633010

ABSTRACT:
A method for fabricating Thin Film Transistors includes the steps of forming a gate electrode on a substrate, forming a gate insulation film and a semiconductor layer successively on the substrate, forming a sidewall spacer only at one sidewall of the gate electrode on the semiconductor layer, and forming impurity regions in the semiconductor layer on both sidewalls of the gate electrode by ion-injecting impurity ions into the semiconductor layer.

REFERENCES:
patent: 4232327 (1980-11-01), Hsu
patent: 4312680 (1982-01-01), Hsu
patent: 4313256 (1982-02-01), Widmann
patent: 4318216 (1982-03-01), Hsu
patent: 5256584 (1993-10-01), Hartmann
patent: 5286664 (1994-02-01), Horiuchi
patent: 5298434 (1994-03-01), Strater et al.
patent: 5324674 (1994-06-01), Possin et al.
patent: 5342798 (1994-08-01), Huang
patent: 5348899 (1994-09-01), Dennison et al.
patent: 5352619 (1994-10-01), Hong
patent: 5358879 (1994-10-01), Brady et al.
patent: 5364807 (1994-11-01), Hwang
patent: 5366909 (1994-11-01), Song et al.
patent: 5371037 (1994-12-01), Yonehara
patent: 5432102 (1995-07-01), Cho et al.
Wolf et al., vol. II, Silicon Processing for the VLSI Era Lattice Press, 1990 pp. 212-214.
S.M. Sze, Physics of Semiconductor Devices, Wiley & Sons, 1969 pp. 568-571.
Wolf et al., vol. I, Silicon Processing for the VLSI ERA, Lattice Press, 1986.
Paper Entitled "16MBit SRAM Cell Technologies for 2.0V Operation" by H. Ohkubo, et al., Published 1991 in IEDM, pp. 481-484.

Affiliated with

Also associated with

Rating

Method for fabricating thin film transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating thin film transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating thin film transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2198389