Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1995-03-23
2000-12-19
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438486, 438487, 117 8, H01L 2100, H01L 2712, H01L 2184
Patent
active
061626678
ABSTRACT:
In a fabrication of a semiconductor device, an amorphous semiconductor film is first formed on a substrate having an insulating surface. Then, a minute amount of catalyst elements for accelerating crystallization of the amorphous semiconductor film is supplied to at least a portion of a surface of the amorphous semiconductor film. A heat treatment is further conducted so that the supplied catalyst elements are diffused into the amorphous semiconductor film. Thus, the catalyst elements are introduced uniformly into the amorphous semiconductor film in a very minute amount or at a low concentration, resulting in polycrystallization of at least a portion of the amorphous semiconductor film. Utilizing the thus obtained crystalline semiconductor film on the substrate surface as an active region, a semiconductor device such as a TFT is fabricated. The introduction of the catalyst elements are conducted by various methods such as: a formation of a film containing a minute amount of the catalyst elements; application of a solution containing the catalyst elements in several spin coating cycles; diffusion of the catalyst elements through a buffer layer; dipping into a solution in which the catalyst elements are dissolved or dispersed; or formation of a plating layer containing the catalyst elements.
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Funai Takashi
Kousai Takamasa
Maekawa Masashi
Makita Naoki
Miyamoto Tadayoshi
Sharp Kabushiki Kaisha
Wilczewski Mary
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