Method for fabricating thin film transistor (TFT) display

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C257SE21441

Reexamination Certificate

active

11195791

ABSTRACT:
A method for fabricating a thin film transistor (TFT) display is provided, wherein the processes of a liquid crystal substrate and an organic thin film transistor (OTFT) substrate are separated. The fabrication of liquid crystal substrate employs the technology of polymer encapsulated liquid crystal molecule, and leaves the polymeric layer as a substrate using a sacrificial layer, so as to improve the flexibility. And the TFT substrate has a high adhesive polymeric protective layer provided on its surface, so as to combine the fabricated TFT substrate and the liquid crystal substrate by laminating. Thereby, the processes of the liquid crystal substrate and the TFT substrate will not affect each other, to improve the process yield and meet the demand for the variety of products.

REFERENCES:
patent: 2004/0178527 (2004-09-01), Liao et al.
patent: 2004-280041 (2004-07-01), None
patent: 594339 (2004-06-01), None
Jia-Chong Ho et al., “Pentacene Organic Thin-Film Transistor Integrated with Color Twisted Nematic Liquid Crystals Display (CTNLCD)”, 2004.
Joost P. A. Vogels et al., “Robust Flexible LCDs with Paintable Technology”, 2004.

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