Method for fabricating thin film transistor substrate

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S030000, C438S151000, C257S059000, C349S042000

Reexamination Certificate

active

07550327

ABSTRACT:
This invention provides method for fabricating a thin film transistor substrate that is adaptive for forming a good pattern design and also removing a stepped difference using a three-mask process.

REFERENCES:
patent: 6063653 (2000-05-01), Lin et al.
patent: 2004/0125327 (2004-07-01), Choi et al.
patent: 2004/0129943 (2004-07-01), Yoo et al.
patent: 2004/0197966 (2004-10-01), Cho et al.
patent: 2004/0232421 (2004-11-01), Ono et al.
patent: 2005/0095759 (2005-05-01), Cho et al.
patent: 2005/0130353 (2005-06-01), Yoo et al.
patent: 2006/0145161 (2006-07-01), Lee et al.
patent: 2007/0164289 (2007-07-01), Jung

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for fabricating thin film transistor substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating thin film transistor substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating thin film transistor substrate will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4089294

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.