Method for fabricating thin film transistor substrate

Details Method for fabricating thin film transistor substrate Method for fabricating thin film transistor substrate

2011-07-12

2011-07-12

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S157000, C438S158000, C438S030000, C257S072000

Reexamination Certificate

active

07977171

ABSTRACT:
A method of fabricating a thin film transistor substrate for reducing a mask process and, at the same time removing a transparent electrode ITO which remains at a non-display area by a contact hole filling process is disclosed. In the method of fabricating the thin film transistor substrate having a display area and a non-display area, a gate pattern is formed at the exterior of the display area. A gate insulating film is formed on a substrate provided with a gate pattern, and then a data pattern is formed. And a protective film is formed on an entire substrate provided with a data pattern, and then a conductive pattern, and then a conductive pattern, which is comprised of a pixel electrode which is formed at a display area, and a lower gate pad electrode and a lower data pad electrode which are formed at a non-display area, is formed.

REFERENCES:
patent: 2003/0076452 (2003-04-01), Kim et al.
patent: 2007/0058116 (2007-03-01), Lee et al.

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