Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-08-19
2008-08-12
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE29278
Reexamination Certificate
active
07410842
ABSTRACT:
A method for fabricating a thin film transistor for an LCD device is presented that uses six mask processes. Portions of a semiconductor layer formed on a substrate are doped with first and second impurities in different regions. A conductive layer is deposited and the conductive and semiconductor layers patterned together by diffraction exposure using a diffraction pattern mask to define source and drain regions and an activate region. Ashing is performed and portions of the conductive layer removed to form the source, drain and channel. A gate insulating layer is formed on the substrate and gates are formed on the gate insulating layer. A passivation film is formed on the substrate and a pixel contact hole exposing one of the drains is etched. A pixel electrode is then deposited such that the pixel electrode is connected to the drain through the pixel contact hole.
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Brinks Hofer Gilson & Lione
LG. Display Co., Ltd
Mulpuri Savitri
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