Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-11-08
1998-10-06
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438166, 438308, 438487, 148DIG91, 117 8, 117904, H01L 21268
Patent
active
058175482
ABSTRACT:
A method for crystallizing a portion of a semiconductor thin film while forming a semiconductor device comprises providing a transparent substrate supporting a metallic gate electrode and an amorphous semiconductor thin film which are separated from each other by a gate insulating film, heating the gate electrode by subjecting it to light rays, and applying a laser beam to the amorphous semiconductor thin film so that the portion of the semiconductor thin film adjacent the metallic gate electrode is heated by both the laser beam and the heat of the gate electrode to cause a crystallization of a portion of the amorphous thin film and then processing the remaining amorphous portions of the thin film to form the transistor structure.
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Noguchi et al, "Enlargement of P-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance P-Si TFT", Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, Yokohama, 1991, pp. 623-625.
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Noguchi Takashi
Shimogaichi Yasushi
Bowers Jr. Charles L.
Radomsky Leon
Sony Corporation
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