Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2004-12-15
2009-11-10
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S150000, C438S156000, C438S585000, C438S685000, C438S687000, C438S763000, C438S791000
Reexamination Certificate
active
07615421
ABSTRACT:
The present invention relates to a method for fabricating thin film transistor, more particularly, to a method for fabricating thin film transistor which not only manufactures a polycrystalline silicon layer having large grain size and containing a trace of residual metal catalyst by heat treating thereby crystallizing the metal catalyst layer after forming an amorphous silicon layer on a substrate, forming a capping layer formed of nitride film having 1.78 to 1.90 of the refraction index when crystallizing the amorphous silicon layer and forming a metal catalyst layer on the capping layer, but also controls characteristics of the polycrystalline silicon layer by controlling the refraction index of the capping layer.
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Lee Ki-Yong
Lee Sang-Woong
Oh Jae-Young
Seo Jin-Wook
Yang Tae-Hoon
Garcia Joannie A
H.C. Park & Associates PLC
Richards N Drew
Samsung Mobile Display Co., Ltd.
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