Method for fabricating thin film transistor

Details Method for fabricating thin film transistor Method for fabricating thin film transistor

2007-12-11

2007-12-11

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S725000, C257SE21435

Reexamination Certificate

active

10872101

ABSTRACT:
A number of minuscule LDD thin film transistors with high precision are arranged on a substrate for use in a liquid crystal display apparatus or other similar devices. The gate electrode is used as a mask at the time of injecting impurities into the semiconductor layer. To realize an LDD structure, the impurities are injected in two installments. The size of the gate electrode is changed in accordance with the length of the LDD regions between the first and second injections. The size of the gate electrode is changed by means of metal oxidation or dry etching. For precision dry etching of the gate electrode, various ideas are put into forming the photo resist.

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