Method for fabricating thin film transistor

Details Method for fabricating thin film transistor Method for fabricating thin film transistor

1996-10-28

1998-08-04

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438286, 438554, 438564, H01L 2184

Patent

active

057892822

ABSTRACT:
A method for fabricating a thin film transistor, comprising the steps of: forming a gate electrode; forming a doped polysilicon film for source/drain at the side wall of the gate electrode, to insulate the gate electrode; forming a gate insulating film; forming an amorphous polysilicon film over the resulting structure; and forming a source/drain region by diffusing the dopants of the doped polysilicon film into the amorphous silicon film, whereby it is possible to form the source/drain region and drain offset structure of a thin film transistor without formation of a source/drain mask and ion implantation and thus, thereby simplifying the overall procedure.

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patent: 5468662 (1995-11-01), Havemann
patent: 5573964 (1996-11-01), Hsu et al.

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