Method for fabricating thin film transistor

Details Method for fabricating thin film transistor Method for fabricating thin film transistor

1997-07-23

1999-02-23

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438159, H01L 21336, H01L 2184

Patent

active

058743260

ABSTRACT:
The thin film transistor is fabricated by etching a semiconductor layer, n.sup.+ semiconductor layer, etch stopper layer, and metal layer with single etching process to decrease the number of masks. By controlling the thickness of the semiconductor layer or the etching selection ratio of the etch stopper layer, an etch stopper thin film transistor or back channel etched thin film transistor can be fabricated.

REFERENCES:
patent: 5427962 (1995-06-01), Sasaki et al.
patent: 5470769 (1995-11-01), Kim
patent: 5473168 (1995-12-01), Kawai et al.
patent: 5478766 (1995-12-01), Park et al.
patent: 5567633 (1996-10-01), Gosain et al.
patent: 5621556 (1997-04-01), Fulks et al.

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