Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2008-04-29
2008-04-29
Pham, Hoai v (Department: 2814)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S112000, C438S122000, C257SE21503
Reexamination Certificate
active
11362419
ABSTRACT:
A thermally enhanced semiconductor package and a fabrication method thereof are provided. A plurality of conductive bumps are formed on bond pads on an active surface of a chip. A heat sink is attached to an inactive surface of the chip and has a surface area larger than that of the chip. An encapsulation body encapsulates the heat sink, chip and conductive bumps, while exposing a bottom or surfaces, not for attaching the chip, of the heat sink and ends of the conductive bumps outside. A plurality of conductive traces are formed on the encapsulation body and electrically connected to the ends of the conductive bumps. A solder mask layer is applied over the conductive traces and formed with a plurality of openings for exposing predetermined portions of the conductive traces. A solder ball is implanted on each exposed portion of the conductive traces.
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Hsiao Cheng-Hsu
Huang Chien-Ping
Corless Peter F.
Edwards Angell Palmer & & Dodge LLP
Jensen Steven M.
Pham Hoai v
Siliconware Precision Industries Co. Ltd.
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