Method for fabricating TFT array substrate

Details Method for fabricating TFT array substrate Method for fabricating TFT array substrate

2006-12-18

2009-11-03

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21094, C257SE21104, C257SE21121, C257SE21372

Reexamination Certificate

active

07611929

ABSTRACT:
An exemplary method for fabricating a thin film transistor (TFT) array substrate includes: providing an insulating substrate; forming a plurality of gate electrodes and a plurality of reflective patterns on the insulating substrate using a first photo-mask process; forming a gate insulating layer, an amorphous silicon layer, a doped amorphous silicon layer, and a source/drain metal layer on the insulating substrate having the gate electrodes and the reflective patterns; forming a plurality of source electrodes and a plurality of drain electrodes on the doped amorphous silicon layer; depositing a passivation layer on the source electrodes, the drain electrodes and the gate insulating layer; and forming a pixel electrode on the passivation layer.

REFERENCES:
patent: 5926702 (1999-07-01), Kwon et al.
patent: 6960484 (2005-11-01), Yoo et al.
patent: 7468527 (2008-12-01), Ahn

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