Etching a substrate: processes – Etching of semiconductor material to produce an article...
Patent
1994-03-28
1996-01-16
Fourson, George
Etching a substrate: processes
Etching of semiconductor material to produce an article...
216 79, 216 99, 437901, 148DIG12, H01L 21306
Patent
active
054840732
ABSTRACT:
A method for fabricating a connecting spring member (24) of an arbitrary shape extending between a central mass (21) and an outer support frame (23) of a sensor as shown in FIG. 7 is disclosed. Each of a pair of generally identical silicon wafers (10, 12) has an inner etch stop layer (16) applied to one face with an outer epitaxial layer (18) formed over such etch stop layer (16). A photosensitive oxide layer (30) is applied to the other face of each of the wafers (10, 12). Next, a pattern of the central mass (21) and outer support frame (23) as shown in FIG. 2 is photographically imposed on the photosensitive oxide layers (18) of each wafer (10, 12). After wet chemical etching of the wafers (10, 12) removes silicon material to the etch stop layer, and the etch stop layer is itself removed in the space between the mass and the frame, the two wafers (10, 12) are bonded to each other as shown in FIG. 5 . Next, the spring shape, of any arbitrary shape is formed by plasma etching from the outer surfaces of the bonded wafers (10, 12) in the area between the mass and the frame. Accordingly the spring members (24) extend between the central mass (21 ) and the outer support frame (23).
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Bilodeau Thomas G.
Fourson George
I/O Sensors, Inc.
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