Method for fabricating strained-silicon CMOS transistor

Details Method for fabricating strained-silicon CMOS transistor Method for fabricating strained-silicon CMOS transistor

2011-01-11

2011-01-11

Tsai, H. Jey (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S371000, C257S418000, C257SE21632

Reexamination Certificate

active

07868390

ABSTRACT:
First, a semiconductor substrate having a first active region and a second active region is provided. The first active region includes a first transistor and the second active region includes a second transistor. A first etching stop layer, a stress layer, and a second etching stop layer are disposed on the first transistor, the second transistor and the isolation structure. A first etching process is performed by using a patterned photoresist disposed on the first active region as a mask to remove the second etching stop layer and a portion of the stress layer from the second active region. The patterned photoresist is removed, and a second etching process is performed by using the second etching stop layer of the first active region as a mask to remove the remaining stress layer and a portion of the first etching stop layer from the second active region.

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