Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1994-05-31
1995-07-18
Popek, Joseph A.
Static information storage and retrieval
Systems using particular element
Capacitors
257300, 257302, 257303, 257306, G11C 1124
Patent
active
054348129
ABSTRACT:
A method is described for fabricating a dynamic random access memory having a high capacitance stacked capacitor. Relatively thick field oxide areas are selectively formed on the surface of a semiconductor substrate while leaving device areas for fabrication of field effect devices. Gate structures and associated source/drain structures are formed within the device areas. A first silicon oxide layer is formed over the device and field oxide areas. The stacked capacitors are now formed by first depositing a thick second polysilicon layer oven the device and field oxide areas. Openings are formed to the desired source/drain structures by etching through the second oxide, second polysilicon, and first oxide layers. Cavities are formed between the first and second oxide layers by laterally etching the second polysilicon layer. A third polysilicon layer is deposited over the device and field oxide areas. The second and third polysilicon layers and the first and second oxide layers are patterned so as to have their remaining portions over the planned capacitor areas. The layers are etched leaving the third polysilicon layer as the bottom storage node electrode contacting the source/drain structures. The remaining second and third polysilicon layers form the storage node of the capacitor. A capacitor dielectric layer is formed over the bottom electrode polysilicon layer. A contact polysilicon layer is deposited as the top plate electrode and the contact polysilicon layer and the dielectric layer are patterned to complete the stacked capacitor.
REFERENCES:
patent: 4700457 (1987-10-01), Matsukawa
patent: 4742018 (1988-05-01), Kimura et al.
patent: 4910566 (1990-03-01), Ema
patent: 5216267 (1993-06-01), Jin et al.
"Are You Ready for Next-Generation Dynamic RAM Chips?" by F. Masuoka pp. 109-112, IEEE Spectrum, Nov. 1990.
T. Ema et al, "3 Dimensional Stalked Capacitor Cell For 16M and 64M DRAMS" IEDM 1988 pp. 592-595.
Industrial Technology Research Institute
Niranjan F.
Popek Joseph A.
Saile George O.
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