Method for fabricating stacked capacitors in a DRAM cell

Details Method for fabricating stacked capacitors in a DRAM cell Method for fabricating stacked capacitors in a DRAM cell

1990-07-31

1992-04-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 60, 437228, 437233, 437918, H01L 2170

Patent

active

051048213

ABSTRACT:
A method for fabricating a capacitor in a substrate on which there is prepared a field oxide layer, a gate electrode, a source region, a drain region and an insulation layer, includes the sequential processes of: etching a first mask pattern formed on a portion of a first conductive layer in contact with the source region; forming sequentially a first illustration layer and a second conductive layer on a surface of the first conductive layer; forming on a second conductive layer a second mask pattern having a reverse phase of the first mask pattern; etching the second conductive layer disposed on a portion of the first conductive layer; etching the oxidized second conductive layer disposed on an upper surface of the first insulation layer in a high pressure diffusion furnace; etching anistrophically the first insulation layer by using the oxidated second conductive layer as a mask; forming a pattern for an underlying electrode by etching anistrophically the first conductive layer to a predetermined thickness; removing the oxidated second conductive layer and said first insulation layer, sequentially; and forming a second insulation layer on the surface of the underlying electrode and covering a third conductive layer over the substrate so as to form an upperlying electrode.

REFERENCES:
patent: 4882289 (1989-01-01), Moriuchi et al.
Watanabe et al., "Stacked capacitor cells for High-density DRAMS" IEDm 1988, pp. 600-603.

Affiliated with

Also associated with

Rating

Method for fabricating stacked capacitors in a DRAM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating stacked capacitors in a DRAM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating stacked capacitors in a DRAM cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2348952