Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2005-02-22
2005-02-22
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C313S310000
Reexamination Certificate
active
06858521
ABSTRACT:
In accordance with the invention, a spaced-apart array of nanostructures is fabricated by providing a shadow mask having a plurality of spaced apart, relatively large apertures, reducing the size of the apertures to nanoscale dimensions, and depositing a material through the mask to form a plurality of spaced-apart nanostructures. In a preferred embodiment, the spaced apart nanostructures comprise nanoscale islands (nano-islands) of catalyst material, and spaced-apart nanowires such as carbon nanotubes are subsequently grown from the islands.
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Coleman W. David
Lowenstein & Sandler PC
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