Method for fabricating silicon targets

Details Method for fabricating silicon targets Method for fabricating silicon targets

2005-04-12

2005-04-12

Guerrero, Maria F. (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S460000, C438S462000, C438S692000, C438S977000, C204S298130

Reexamination Certificate

active

06878640

ABSTRACT:
A method for fabricating silicon tiles and silicon tile targets has been provided, such as may be used in the sputter deposition of thin film transistor (TFT) silicon films. The method describes processes of cutting the tiles, beveling the tiles edges, etching the tiles to minimize residual damage caused by cutting the tiles, polishing the tiles to a specified flatness, and attaching the tiles to a backing plate. All these processes are performed with the aim of minimizing contamination and particle formations when the target is used for sputter deposition.

REFERENCES:
patent: 5836506 (1998-11-01), Hunt et al.
patent: 6019666 (2000-02-01), Roberts et al.
patent: 6073830 (2000-06-01), Hunt et al.
patent: 6464847 (2002-10-01), Kumahara et al.
patent: 6533907 (2003-03-01), Demaray et al.
patent: 6774009 (2004-08-01), Johnson et al.

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