Method for fabricating silicon-on-insulator wafer

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies

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Details

438455, 438459, 438928, 438967, 438977, H01L 2130, H01L 2146

Patent

active

061366668

ABSTRACT:
Disclosed is a method for fabricating a silicon-on-insulator wafer, particularly to a cost reductive method.

REFERENCES:
patent: 4601779 (1986-07-01), Abernathey et al.
patent: 4826787 (1989-05-01), Muto et al.
patent: 5449638 (1995-09-01), Hong et al.
patent: 5523254 (1996-06-01), Satoh et al.
patent: 6010950 (2000-01-01), Okumura et al.

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