Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-08-13
1999-05-04
Booth, Richard A.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438459, H01L 2184
Patent
active
058997121
ABSTRACT:
A method for fabricating an SOI wafer, which involves bonding a plurality of wafers each provided at its upper surface with an oxide film in such a manner that the oxide film of each wafer is upwardly disposed, heating the resulting wafer structure to form an ingot, and cutting the ingot into pieces which will be used as SOI wafers. Accordingly, it is possible to achieve an improvement in productivity in the fabrication of SOI wafers. As a result, mass production can be achieved. The invention also provides a method for fabricating an SOI device, which involves forming a silicon film having a desired thickness beneath a field oxide film and implanting impurity ions in the silicon film, thereby forming doped regions. Accordingly, it is possible to solve the problem caused by floating of the semiconductor substrate.
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Choi Ki Sik
Koh Yo Hwan
Booth Richard A.
Hyundai Electronics Industries Co,. Ltd.
Nath Gary M.
Novick Harold L.
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