Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-01
2008-01-01
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S065000
Reexamination Certificate
active
11481525
ABSTRACT:
A method for fabricating germanium-on-insulator (GOI) substrate materials, the GOI substrate materials produced by the method and various structures that can include at least the GOI substrate materials of the present invention are provided. The GOI substrate material include at least a substrate, a buried insulator layer located atop the substrate, and a Ge-containing layer, preferably pure Ge, located atop the buried insulator layer. In the GOI substrate materials of the present invention, the Ge-containing layer may also be referred to as the GOI film. The GOI film is the layer of the inventive substrate material in which devices can be formed.
REFERENCES:
patent: 5906951 (1999-05-01), Chu et al.
patent: 6633066 (2003-10-01), Bae et al.
patent: 6677655 (2004-01-01), Fitzergald
Chen Tze-chiang
Cohen Guy M.
Reznicek Alexander
Sadana Devendra K.
Shahidi Ghavam G.
Nguyen Cuong
Trepp, Esq. Robert M.
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