Method for fabricating semiconductor wafers

Details Method for fabricating semiconductor wafers Method for fabricating semiconductor wafers

1996-12-11

1998-12-22

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438471, 438747, 438928, 438964, 438974, H01L 21302

Patent

active

058519246

ABSTRACT:
A method for fabricating a semiconductor wafer to reduce the number of processing steps and produce low-cost wafers in a short time is disclosed. The method involves surface grinding both the front surface and back surface of a single-crystal silicon wafer which has been sliced from a rod and chamfered. In the surface grinding step, the size numbers of abrasive grains are larger than #2000 for front surface grinding, and smaller than #600 for back surface grinding. The front surface is then chemical polished as a mirror surface which satisfies the requirement of a later photolithography step. Moreover, a deformation layer formed on the back surface of the semiconductor wafer is partially etched and left to provide an extrinsic gettering function. An epitaxial layer can be formed on the front surface to make the wafer an epitaxial wafer. The method of the present invention requires fewer process steps as compared with conventional methods, thereby reducing manufacturing time and cost.

REFERENCES:
patent: 3905162 (1975-09-01), Lawrence et al.
patent: 4144099 (1979-03-01), Edmonds et al.
patent: 4276114 (1981-06-01), Takano et al.
patent: 5429711 (1995-07-01), Watanabe et al.
patent: 5447890 (1995-09-01), Kato et al.

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor wafers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor wafers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor wafers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2047279