Method for fabricating semiconductor wafers

Details Method for fabricating semiconductor wafers Method for fabricating semiconductor wafers

1996-08-29

1999-05-04

Nuzzolillo, Maria

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438747, 438753, 438928, 438906, 438974, H01L 21304

Patent

active

058997431

ABSTRACT:
A method for efficiently fabricating semiconductor wafers of good planarization without utilizing chemical solutions of high etching rate is disclosed. The method slices a single-crystal ingot into slices of wafers. The edge of each wafer is chamfered. A lapping step is carried out to planarize the chamfered wafer. Both side surfaces of the wafer are then polished. Next, the wafer surface is mirror polished. Finally, the wafer is cleaned.

REFERENCES:
patent: 4144099 (1979-03-01), Edmonds et al.
patent: 5374842 (1994-12-01), Kusakabe
patent: 5494862 (1996-02-01), Kato et al.
patent: 5582536 (1996-12-01), Kagamida

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