Method for fabricating semiconductor wafers

Details Method for fabricating semiconductor wafers Method for fabricating semiconductor wafers

1997-09-15

1999-09-14

Fourson, George

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

438406, H01L 2176

Patent

active

059536225

ABSTRACT:
A method for fabricating silicon-on-insulator (SOI) wafers which is capable of simplifying the fabrication process while improving the productivity of SOI wafers. In accordance with this method, a first wafer formed with a thermal oxide film is bonded to a second wafer formed with an oxygen ion-implanted region and a hydrogen ion-implanted region. The bonded wafer structure is annealed and then cut along the hydrogen ion-implanted region, so that it is divided into two wafer structures. The wafer structure including the first wafer is annealed to obtain a strengthened chemical coupling property. The wafer structure including the second wafer is annealed to oxidize the oxygen ion-implanted region of the second wafer, thereby forming an oxide film in the second wafer. The first and second wafers are then planarized, thereby forming a pair of SOI wafers.

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