Method for fabricating semiconductor wafers

Details Method for fabricating semiconductor wafers Method for fabricating semiconductor wafers

1999-02-12

2000-12-19

Niebling, John F.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438460, 438753, 438928, 438974, H01L 21302, H01L 21461

Patent

active

061627305

ABSTRACT:
A method for efficiently fabricating semiconductor wafers of good planarization without utilizing chemical solutions of high etching rate is disclosed. The method slices a single-crystal ingot into slices of wafers. The edge of each wafer is chamfered. A lapping or grinding step is carried out to planarize the chamfered wafer. Both side surfaces of the wafer are then polished. Next, the wafer surface is mirror polished. Finally, the wafer is cleaned.

REFERENCES:
patent: 4144099 (1979-03-01), Edmonds et al.
patent: 5374842 (1994-12-01), Kusakabe
patent: 5494862 (1996-02-01), Kato et al.
patent: 5582536 (1996-12-01), Kagamida

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