Method for fabricating semiconductor transistor

Details Method for fabricating semiconductor transistor Method for fabricating semiconductor transistor

2008-06-12

2010-06-29

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S009000, C438S954000, C257SE21567, C257SE21311, C257SE21314, C257SE21327, C257SE21416, C257SE21547

Reexamination Certificate

active

07745349

ABSTRACT:
A method for fabricating a semiconductor transistor which eliminates device defects generated during an etching process for forming gates. The method may include laminating an ONO layer on and/or over a semiconductor substrate, and then coating a polysilicon layer on and/or over the ONO layer, and then forming a photoresist pattern on and/or over the polysilicon layer, and then sequentially performing a first etching of the polysilicon layer using the photoresist pattern as an etching mask so as to maintain a predetermined thickness of the polysilicon layer and then a second etching to remove the polysilicon layer remaining from the first etching.

REFERENCES:
patent: 5637526 (1997-06-01), Song
patent: 5960293 (1999-09-01), Hong et al.
patent: 6969655 (2005-11-01), Kim
patent: 7572702 (2009-08-01), Yoon
patent: 2004/0082184 (2004-04-01), Suzuki
patent: 2005/0287742 (2005-12-01), Kang
patent: 1494117 (2004-05-01), None

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4236658