Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-03-28
2010-11-23
Tsai, H. Jey (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S381000, C257SE27098
Reexamination Certificate
active
07838946
ABSTRACT:
A method for fabricating a semiconductor structure is disclosed. A substrate with a first transistor having a first dummy gate and a second transistor having a second dummy gate is provided. The conductive types of the first transistor and the second transistor are different. The first and second dummy gates are simultaneously removed to form respective first and second openings. A high-k dielectric layer, a second type conductive layer and a first low resistance conductive layer are formed on the substrate and fill in the first and second openings, with the first low resistance conductive layer filling up the second opening. The first low resistance conductive layer and the second type conductive layer in the first opening are removed. A first type conductive layer and a second low resistance conductive layer are then formed in the first opening, with the second low resistance conductive layer filling up the first opening.
REFERENCES:
patent: 6573134 (2003-06-01), Ma et al.
patent: 7153784 (2006-12-01), Brask et al.
patent: 7750416 (2010-07-01), Lee et al.
Chen Yi-Wen
Cheng Li-Wei
Chiang Tian-Fu
Chou Cheng-Hsien
Hsu Che-Hua
Hsu Winston
Margo Scott
Tsai H. Jey
United Microelectronics Corp.
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