Method for fabricating semiconductor memory device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S635000, C257SE21495, C257SE21582

Reexamination Certificate

active

07842603

ABSTRACT:
A method for fabricating a semiconductor memory device includes forming an insulation layer including a contact plug over a substrate structure, forming a metal line structure over the insulation layer, the metal line structure including a patterned diffusion barrier layer and a metal line and contacting the contact plug, and oxidizing a surface of the metal line to form a passivation layer over the metal line.

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patent: 10-2005-0032305 (2005-04-01), None
patent: 10-2006-0072217 (2006-06-01), None
patent: 10-0613383 (2006-08-01), None

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