Method for fabricating semiconductor devices with thick high qua

Details Method for fabricating semiconductor devices with thick high qua Method for fabricating semiconductor devices with thick high qua

1997-11-12

2000-12-26

Nelms, David

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438770, H01L 2131

Patent

active

061659142

ABSTRACT:
The rapid growth of thick thermally grown oxide layers on silicon wafers is described herein. By patterning and etching a plurality of pillars on the surface of the silicon wafer, oxide growth is primarily lateral and not vertical, enabling it to proceed much faster. In other embodiments, the pillars are fabricated with an oxygen barrier on their top surface, preventing oxide growth on the top of the pillars and resulting in an oxide layer with a more planar upper surface.

REFERENCES:
patent: 5103276 (1992-04-01), Shen et al.
patent: 5106776 (1992-04-01), Shen et al.
patent: 5300450 (1994-04-01), Shen et al.
patent: 5851899 (1998-12-01), Weigand

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