Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-09-27
2011-11-08
Blum, David S (Department: 2813)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S542000, C257SE21135, C257SE29345
Reexamination Certificate
active
08053340
ABSTRACT:
A transistor which includes halo regions disposed in a substrate adjacent to opposing sides of the gate. The halo regions have upper and lower regions. The upper region is a crystalline region with excess vacancies and the lower region is an amorphous region. Source/drain diffusion regions are disposed in the halo regions. The source/drain diffusion regions overlap the upper and lower halo regions. This architecture offers the minimal extension resistance as well as minimum lateral diffusion for better CMOS device scaling.
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Benistant Francis
Chan Lap
Colombeau Benjamin
Indajang Bangun
Yeong Sai Hooi
Blum David S
Globalfoundries Singapore Pte. Ltd.
Horizon IP Pte Ltd
National University of Singapore
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