Method for fabricating semiconductor devices

Details Method for fabricating semiconductor devices Method for fabricating semiconductor devices

2007-07-17

2007-07-17

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

C438S022000

Reexamination Certificate

active

10849823

ABSTRACT:
A method for fabricating semiconductor devices forms a semiconductor layer containing a positive layer on a mother substrate and then forms a metal layer on the semiconductor layer. After forming the metal layer, the method separates the mother substrate from the semiconductor layer and then removes a desired region of the metal layer from the exposed surface of the semiconductor layer from which the mother substrate has been separated to form a plurality of mutually separated semiconductor devices each containing the semiconductor layer.

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patent: 2003/0189215 (2003-10-01), Lee et al.
patent: 2004/0140474 (2004-07-01), Ueda et al.
patent: 2004/0245543 (2004-12-01), Yoo
patent: 2006/0202211 (2006-09-01), Ueda et al.
patent: 2001-274507 (2001-10-01), None
patent: 2004-88083 (2004-03-01), None

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