Method for fabricating semiconductor devices

Details Method for fabricating semiconductor devices Method for fabricating semiconductor devices

2005-09-20

2005-09-20

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S674000, C438S675000

Reexamination Certificate

active

06946388

ABSTRACT:
A method for fabricating semiconductor devices is disclosed, the method including forming a landing plug on a lower interlayer insulating film, successively depositing an upper interlayer insulating film and a nitride film, forming a bit line contact hole, depositing a conductive layer for a contact plug, and forming a contact plug through a CMP process.

REFERENCES:
patent: 6376386 (2002-04-01), Oshima
patent: 6794244 (2004-09-01), Mizutani et al.
patent: 6849539 (2005-02-01), Ueda
patent: 2002/0155699 (2002-10-01), Ueda
patent: 2003/0054622 (2003-03-01), Yamamura
patent: 2003/0064578 (2003-04-01), Nakamura et al.
patent: 2004/0009655 (2004-01-01), Jung
patent: 2004/0266177 (2004-12-01), Tanaka et al.

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