Method for fabricating semiconductor devices

Details Method for fabricating semiconductor devices Method for fabricating semiconductor devices

1977-03-03

1978-08-29

Powell, William A.

Metal treatment

Compositions

Heat treating

148187, 156643, 156653, 156657, 156659, 204192E, 204192EC, 357 50, 357 54, 427 93, 427 94, H01L 2195, H01L 2174, H01L 2176

Patent

active

041101251

ABSTRACT:
A method for fabricating microminiature, planar semiconductor devices in which the number of defects, in particular, pipes, is minimized. The thicknesses of the thermally grown silicon dioxide and of the silicon nitride masking layers which are used for the formation of limited impurity regions by high temperature diffusion processes within the semiconductor substrate have a specified, limited range. The thickness of the silicon dioxide is between 800A - 3000A and the thickness of the silicon nitride is between around 250A and 600A, preferably 500A. The method is particularly useful in forming extremely small emitter regions in bipolar transistors.

REFERENCES:
patent: 3917495 (1975-11-01), Horn

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1631132