Method for fabricating semiconductor device with polycide struct

Details Method for fabricating semiconductor device with polycide struct Method for fabricating semiconductor device with polycide struct

1996-05-24

2000-06-13

Graybill, David E.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

438586, 438592, 438649, 438653, 438655, 438660, 438683, 148DIG19, 148DIG122, 148DIG147, H01L 21283

Patent

active

060749253

ABSTRACT:
The method for fabricating a semiconductor device includes steps of forming a layered structure by sequentially depositing a silicon film containing an impurity, a metal silicide film, and an amorphous silicon film containing an impurity, forming an electrode or an interconnect in a three-layer structure by selectively etching the amorphous silicon film, the metal silicide film and the silicon film in this order, and diffusing the impurity in the amorphous silicon film into the metal silicide film by a thermal process. Thus, the impurity is supplied from the amorphous silicon film to the metal silicide film so that the ion-implantation as required in the prior art is not necessary.

REFERENCES:
patent: 4549914 (1985-10-01), Oh
patent: 4569701 (1986-02-01), Oh
patent: 4584760 (1986-04-01), Okazawa
patent: 4977098 (1990-12-01), Yu et al.
patent: 5192708 (1993-03-01), Beyer et al.
patent: 5315140 (1994-05-01), Sugahara et al.
patent: 5318919 (1994-06-01), Noguchi et al.
patent: 5510296 (1996-04-01), Yen et al.
patent: 5543347 (1996-08-01), Kawano et al.
Wolf and Tauber, "Silicon Processing for the VLSI Era vol. 1: Process Technology", Lattice Press, pp. 181-182, 1986.

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