Method for fabricating semiconductor device with planarization s

Details Method for fabricating semiconductor device with planarization s Method for fabricating semiconductor device with planarization s

1996-10-18

1998-03-31

Niebling, John

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438699, H01L 21265

Patent

active

057338183

ABSTRACT:
A semiconductor device is fabricated by steps of forming, by atmospheric pressure CVD or low pressure CVD without using plasma, a first insulating layer that covers a semiconductor substrate having a protruded and recessed surface; forming, by bias plasma CVD using an electron cyclotron resonance process, a second insulating film that covers the first insulating layer; and planarizing the second insulating film by a CMP process. In this way, the time required for planarizing a surface of the semiconductor substrate by the CMP can be reduced.

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