Method for fabricating semiconductor device with metal line

Details Method for fabricating semiconductor device with metal line Method for fabricating semiconductor device with metal line

2009-11-13

2011-10-04

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S640000, C438S643000, C257SE21577, C257SE21584

Reexamination Certificate

active

08030205

ABSTRACT:
A method for fabricating a semiconductor device includes forming an inter-layer insulation layer on a substrate; forming openings in the inter-layer insulation layer; forming a metal barrier layer in the openings and on the inter-layer insulation layer; forming a first conductive layer on the metal barrier layer and filled in the openings; etching the first conductive layer to form interconnection layers in the openings and to expose portions of the metal barrier layer, the interconnection layers being inside the openings and at a depth from a top of the openings; etching the exposed portions of the metal barrier layer to obtain a sloped profile of the metal barrier layer at top lateral portions of the openings; forming a second conductive layer over the inter-layer insulation layer, the interconnection layers and the metal barrier layer with the sloped profile; and patterning the second conductive layer to form metal lines.

REFERENCES:
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patent: 6020271 (2000-02-01), Yanagida
patent: 6654233 (2003-11-01), Tseng et al.
patent: 6794304 (2004-09-01), Gu et al.
patent: 2003303882 (2003-10-01), None
Bestwick et al. “Tungsten etching mechanisms in CF4/O2 reactive ion etching plasmas” J. Appl. Phys. 66 (10), Nov. 15, 1989.

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