Method for fabricating semiconductor device with interface...

Details Method for fabricating semiconductor device with interface... Method for fabricating semiconductor device with interface...

2008-06-30

2010-02-23

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S648000, C438S653000, C257S751000, C257SE21584

Reexamination Certificate

active

07666785

ABSTRACT:
A method for fabricating a semiconductor memory device includes forming a first layer, injecting a tungsten source gas and a silicon source gas simultaneously to form a tungsten silicide layer over the first layer, forming a tungsten nitride layer over the tungsten silicide layer without a post purge process of additionally supplying the silicon source gas, and forming a second layer over the tungsten nitride layer.

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patent: 7053459 (2006-05-01), Yamamoto et al.
patent: 2003/0170942 (2003-09-01), Taguwa
patent: 2005/0070097 (2005-03-01), Barmak et al.
patent: 1020020038273 (2002-05-01), None
patent: 1020060083480 (2006-07-01), None

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