Method for fabricating semiconductor device with fine patterns

Details Method for fabricating semiconductor device with fine patterns Method for fabricating semiconductor device with fine patterns

2006-10-10

2006-10-10

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C438S700000, C438S952000, C257SE21577

Reexamination Certificate

active

07119013

ABSTRACT:
A method for fabricating a semiconductor device capable of preventing a hard mask from being lifted and patterns from being defective. Particularly, an inter-layer insulation layer and an etch stop layer formed on a substrate structure provided with conductive structures are first planarized. Then, a hard mask made of a nitride-based material is formed by using a photoresist pattern and an anti-reflective coating layer as an etch mask. After the hard mask formation, the photoresist pattern and the anti-reflective coating layer are removed. Subsequently, a SAC etching process is performed to etch the inter-layer insulation layer with use of the hard mask as an etch mask, thereby obtaining a contact hole exposing the etch stop layer disposed between the conductive structures. The exposed etch stop layer is removed through the use of a blanket etch-back process, and a cleaning process is applied thereafter.

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