Method for fabricating semiconductor device with an increased pr

Details Method for fabricating semiconductor device with an increased pr Method for fabricating semiconductor device with an increased pr

1998-01-09

2000-07-25

Fahmy, Wael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438595, 257520, H01L 214763

Patent

active

06093641&

ABSTRACT:
Methods for fabricating a semiconductor device suitable for increasing process tolerance of the device are disclosed. One method includes the steps of sequentially forming an insulating layer, a planarization layer, and a nitride layer over cell transistors formed on a substrate; patterning the nitride layer to define first contact holes; forming polysilicon sidewall spacers on the sides of the patterned nitride layer; removing portions of the planarization layer and the insulating layer using the patterned nitride layer and the polysilicon sidewall spacers, so as to define second contact holes; and forming pad polysilicon layers in the second contact holes, so as to expose portions of the patterned nitride layer. Another method includes the steps of sequentially forming an insulating layer and a planarization layer over cell transistors formed on a substrate; defining pad contact holes through the insulating layer and the planarization layer; forming pad polysilicon layers in the pad contact holes; exposing portions of cap nitride layers of the cell transistors; and forming pad polysilicon sidewall spacers on the sides of the pad polysilicon layer.

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